CFET architecture for balancing logic library and SRAM bitcell
摘要:
The independent claims of the present disclosure signify a concise description of embodiments. An electronic structure based on complementary-field effect transistor (CFET) architecture is disclosed. The electronic structure comprises an n-channel metal-oxide-semiconductior (NMOS) gate-all-around (GAA) channel in a first layer, and p-channel metal-oxide-semiconductor (PMOS) GAA channel in a second layer. The PMOS GAA channel is wider compared to the NMOS GAA channel. The first layer is above the second layer and separated by a dielectric layer.
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