Invention Grant
- Patent Title: Multi-layer film device and method
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Application No.: US17849995Application Date: 2022-06-27
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Publication No.: US11777035B2Publication Date: 2023-10-03
- Inventor: Yao-Jen Chang , Chih-Chien Chi , Chen-Yuan Kao , Hung-Wen Su , Kai-Shiang Kuo , Po-Cheng Shih , Jun-Yi Ruan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16939199 2020.07.27
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L29/66 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L21/8238 ; H01L27/092
Abstract:
A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.
Public/Granted literature
- US20220328690A1 Multi-Layer Film Device and Method Public/Granted day:2022-10-13
Information query
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