- 专利标题： Semiconductor structure
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申请号： US17366053申请日： 2021-07-02
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公开(公告)号： US11569380B2公开(公告)日： 2023-01-31
- 发明人: Wei-Hsuan Chang , Ming-Hua Tsai , Chin-Chia Kuo
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/45
摘要：
A semiconductor structure is provided, and the semiconductor structure includes a substrate, and an active area is defined thereon, a gate structure spanning the active area, wherein the overlapping range of the gate structure and the active area is defined as an overlapping region, and the overlapping region includes four corners, and at least one salicide block covering the four corners of the overlapping region.
公开/授权文献
- US20230006062A1 Semiconductor structure 公开/授权日：2023-01-05
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