- 专利标题: Imaging device and solid-state image sensor
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申请号: US17252774申请日: 2019-06-07
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公开(公告)号: US11563058B2公开(公告)日: 2023-01-24
- 发明人: Yukio Kaneda , Fumihiko Koga
- 申请人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址: JP Kanagawa
- 专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sheridan Ross P.C.
- 优先权: JPJP2018-126650 20180703
- 国际申请: PCT/JP2019/022702 WO 20190607
- 国际公布: WO2020/008801 WO 20200109
- 主分类号: H04N5/335
- IPC分类号: H04N5/335 ; H01L27/30 ; H04N9/04 ; H04N5/369 ; H01L51/44 ; H01L27/146 ; H01L27/28
摘要:
An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
公开/授权文献
- US11532672B2 Imaging device and solid-state image sensor 公开/授权日:2022-12-20
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