- 专利标题： Forming metal contacts on metal gates
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申请号： US17176020申请日： 2021-02-15
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公开(公告)号： US11532717B2公开(公告)日： 2022-12-20
- 发明人: Chao-Hsun Wang , Yu-Feng Yin , Kuo-Yi Chao , Mei-Yun Wang , Feng-Yu Chang , Chen-Yuan Kao
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/085
- IPC分类号： H01L27/085 ; H01L29/423 ; H01L29/45 ; H01L21/28 ; H01L29/49 ; H01L29/78 ; H01L29/66
摘要：
A semiconductor structure includes a metal gate structure comprising a gate dielectric layer and a gate electrode, a conductive layer disposed over the metal gate structure, and a contact feature in direct contact with the top portion of the conductive layer, where the conductive layer includes a bottom portion disposed below a top surface of the metal gate structure and a top portion disposed over the top surface of the metal gate structure, and where the top portion laterally extends beyond a sidewall of the bottom portion.
公开/授权文献
- US20210167179A1 FORMING METAL CONTACTS ON METAL GATES 公开/授权日：2021-06-03
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