The present disclosure includes apparatuses, methods, and systems for performing refresh operations on memory cells. A memory can include a group of memory cells and one or more additional memory cells whose data state is indicative of whether to refresh the group of memory cells. Circuitry is configured to apply a first voltage pulse to the group of memory cells to sense a data state of the memory cells of the group, apply, while the first voltage pulse is applied to the group of memory cells, a second voltage pulse having a greater magnitude than the first voltage pulse to the one or more additional memory cells to sense a data state of the one or more additional memory cells, and determine whether to perform a refresh operation on the group of memory cells based on the sensed data state of the one or more additional memory cells.