According to an embodiment, a memory system comprises a resistive memory device configured to perform a read operation and a write operation based on a command and an address, wherein the resistive memory device includes a plurality of banks each including a plurality of memory cells; and a memory controller configured to schedule a request from a host to generate the command and the address, wherein, when a time interval is less than a first time, the memory controller is configured to stop generation of the command and re-schedule the command corresponding to the request, the time interval spanning from a time of generation of a prior write command for a same memory cell to a time of generation of the command generated according to the request.