- 专利标题: Method of controlling on-die termination and system performing the same
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申请号: US17141357申请日: 2021-01-05
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公开(公告)号: US11475930B2公开(公告)日: 2022-10-18
- 发明人: Young-Hoon Son , Si-Hong Kim , Chang-Kyo Lee , Jung-Hwan Choi , Kyung-Soo Ha
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2017-0066377 20170529,KR10-2017-0089692 20170714
- 主分类号: H03K19/003
- IPC分类号: H03K19/003 ; G11C7/24 ; H03H7/38 ; G11C7/10
摘要:
A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.
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