- 专利标题: Micro semiconductor device and micro semiconductor display
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申请号: US17179845申请日: 2021-02-19
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公开(公告)号: US11417800B2公开(公告)日: 2022-08-16
- 发明人: Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Tzu-Yang Lin , Yu-Hung Lai
- 申请人: PlayNitride Display Co., Ltd.
- 申请人地址: TW Zhunan Township
- 专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人: PlayNitride Display Co., Ltd.
- 当前专利权人地址: TW Zhunan Township
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: TW107143456 20181204
- 主分类号: H01L33/20
- IPC分类号: H01L33/20 ; H01L27/15 ; H01L33/62 ; H01L33/38
摘要:
A micro semiconductor device and a micro semiconductor display are provided. The micro semiconductor device includes an epitaxial structure, a first electrode, a second electrode and a supporting layer. The epitaxial structure has a bottom surface and a top surface, wherein the bottom surface is defined as a central region and a peripheral region. A first electrode and a second electrode are disposed on the central region of the bottom surface of the epitaxial structure, or the first electrode is disposed on the central region of the bottom surface of the epitaxial structure and the second electrode is disposed on the top surface of the epitaxial structure. The supporting layer is disposed on the peripheral region of the bottom surface of the epitaxial structure.
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