- 专利标题： Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices
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申请号： US16739299申请日： 2020-01-10
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公开(公告)号： US11349030B2公开(公告)日： 2022-05-31
- 发明人: Jiehui Shu , Haiting Wang , Hong Yu
- 申请人： GLOBALFOUNDRIES U.S. Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Hoffman Warnick LLC
- 代理商 Francois Pagette
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/088 ; H01L29/66 ; H01L21/762 ; H01L21/02
摘要：
A transistor device that includes a single semiconductor structure having an outer perimeter and a vertical height, wherein the single semiconductor structure is at least partially defined by a trench formed in a semiconductor substrate and a first layer of material positioned on the bottom surface of the trench and around the outer perimeter of the single semiconductor structure. The device also includes a second layer of material positioned on the first layer of material and around the outer perimeter of the single semiconductor structure, a gap between the outer perimeter of the single semiconductor structure and both the first and second layers of material (when considered collectively) and an insulating sidewall spacer positioned in the gap, wherein the insulating sidewall spacer has a vertical height that is less than the vertical height of the single semiconductor structure.
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