- 专利标题: Integrated circuits having cross-couple constructs and semiconductor devices including integrated circuits
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申请号: US16191720申请日: 2018-11-15
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公开(公告)号: US11335673B2公开(公告)日: 2022-05-17
- 发明人: Jung-Ho Do , Dal-Hee Lee , Jin-Young Lim , Tae-Joong Song , Jong-Hoon Jung
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Myers Bigel, P.A.
- 优先权: KR10-2017-0178738 20171222
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L27/118 ; G11C5/06 ; G06F30/00 ; G11C8/16 ; G11C11/412 ; H01L21/768 ; H01L27/088
摘要:
An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.
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