发明授权
- 专利标题： Semiconductor device including ferroelectric film and method of manufacturing the same
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申请号： US16911811申请日： 2020-06-25
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公开(公告)号： US11289510B2公开(公告)日： 2022-03-29
- 发明人: Tadashi Yamaguchi
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JPJP2019-136577 20190725
- 主分类号： H01L27/1159
- IPC分类号： H01L27/1159 ; H01L29/51 ; H01L27/11563 ; H01L29/78 ; H01L21/28 ; H01L27/11585 ; H01L29/40
摘要：
A first amorphous film including hafnium, oxygen and a first element is formed, and a plurality of grains including a second element which differs from any of hafnium, oxygen and the first element is formed on the first amorphous film. An insulating film including a third element that differs from any of hafnium and the second element is formed over the plurality of grains and the first amorphous film, thereby forming a plurality of grains including the second element and the third element. A second amorphous film including the same materials as those of the first amorphous film is formed on the plurality of grains and the first amorphous film. By performing heat treatment, the first amorphous film and the second amorphous film are crystallized to form a first ferroelectric film which is an orthorhombic and a second ferroelectric film which is an orthorhombic, respectively.
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