- 专利标题： Methods of etching metal oxides with less etch residue
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申请号： US16831251申请日： 2020-03-26
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公开(公告)号： US11232955B2公开(公告)日： 2022-01-25
- 发明人: Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/311 ; H01L21/02 ; H01L21/306
摘要：
Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
公开/授权文献
- US20200227275A1 Methods Of Etching Metal Oxides With Less Etch Residue 公开/授权日：2020-07-16
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