- 专利标题: Bias current variation correction for complementary metal-oxide-semiconductor (CMOS) temperature sensor
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申请号: US16268124申请日: 2019-02-05
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公开(公告)号: US11181426B1公开(公告)日: 2021-11-23
- 发明人: Edward Cullen , Umanath R. Kamath , John K. Jennings , Diarmuid Collins , Ionut C. Cical
- 申请人: Xilinx, Inc.
- 申请人地址: US CA San Jose
- 专利权人: Xilinx, Inc.
- 当前专利权人: Xilinx, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Paradice and Li LLP
- 主分类号: G01K7/00
- IPC分类号: G01K7/00 ; G01K15/00 ; G01K7/01 ; G01K1/00
摘要:
A temperature sensor includes a current source to produce a first bias current and a second bias current, a plurality of diodes, and temperature estimation circuitry. The plurality of diodes includes at least a first diode to receive the first bias current and a second diode to receive the second bias current. The temperature estimate circuitry measures a first voltage bias across the first diode resulting from the first bias current and a second voltage bias across the second diode resulting from the second bias current, and estimates a temperature of an environment of the temperature sensor based at least in part on the first voltage bias and the second voltage bias. The temperature sensor further includes error detection circuitry to measure at least one of the first or second bias currents and determine an amount of error in the temperature estimate based at least in part on the measurement.
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