- 专利标题： MOSFETs with multiple dislocation planes
-
申请号： US16388488申请日： 2019-04-18
-
公开(公告)号： US11158740B2公开(公告)日： 2021-10-26
- 发明人: Wei-Yuan Lu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/265 ; H01L21/322 ; H01L29/32 ; H01L29/66 ; H01L29/10 ; H01L21/762 ; H01L29/04 ; H01L29/08
摘要：
A method includes forming a metal-oxide-semiconductor field-effect transistor (MOSFET). The Method includes performing an implantation to form a pre-amorphization implantation (PAI) region adjacent to a gate electrode of the MOSFET, forming a strained capping layer over the PAI region, and performing an annealing on the strained capping layer and the PAI region to form a dislocation plane. The dislocation plane is formed as a result of the annealing, with a tilt angle of the dislocation plane being smaller than about 65 degrees.
公开/授权文献
- US20190245077A1 MOSFETs with Multiple Dislocation Planes 公开/授权日：2019-08-08
信息查询
IPC分类:
