Invention Grant
- Patent Title: FinFET devices
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Application No.: US16911158Application Date: 2020-06-24
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Publication No.: US11145551B2Publication Date: 2021-10-12
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Theodoras E. Standaert , Junli Wang
- Applicant: Tessera, Inc.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Lee & Hayes, P.C.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/762 ; H01L29/78 ; H01L29/06 ; H01L29/417 ; H01L21/02 ; H01L21/306 ; H01L21/324 ; H01L27/088 ; H01L29/66
Abstract:
FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
Public/Granted literature
- US20200328124A1 FINFET DEVICES Public/Granted day:2020-10-15
Information query
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