Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16446590Application Date: 2019-06-19
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Publication No.: US11139243B2Publication Date: 2021-10-05
- Inventor: Feng-Yi Chang , Shih-Fang Tzou , Fu-Che Lee , Chien-Cheng Tsai , Feng-Ming Huang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu; CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN201611258003.0 20161230
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L21/311 ; H01L27/108 ; H01L21/768 ; H01L23/522 ; H01L21/762 ; H01L29/06
Abstract:
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
Public/Granted literature
- US20190304909A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2019-10-03
Information query
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