- 专利标题： Memory system with minimized heat generation which includes memory that operates at cryogenic temperature
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申请号： US16564837申请日： 2019-09-09
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公开(公告)号： US11127451B2公开(公告)日： 2021-09-21
- 发明人: Se-Won Lee
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2018-0152417 20181130
- 主分类号： G11C11/4074
- IPC分类号： G11C11/4074 ; G11C11/4093 ; F25D3/10 ; H01L23/44 ; G11C11/4072 ; G11C7/04 ; G11C11/4076 ; G11C11/406
摘要：
A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.
公开/授权文献
- US20200176049A1 MEMORY SYSTEM 公开/授权日：2020-06-04
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