专利检索 ap:("SK hynix Inc.") AND inv:"Se-Won Lee" 第 1 页

1.

发明授权
Memory system with minimized heat generation which includes memory that operates at cryogenic temperature 有权

公开(公告)号：US11127451B2

公开(公告)日：2021-09-21

申请号：US16564837

申请日：2019-09-09

申请人： SK hynix Inc.

发明人： Se-Won Lee

IPC分类号： G11C11/4074 , G11C11/4093 , F25D3/10 , H01L23/44 , G11C11/4072 , G11C7/04 , G11C11/4076 , G11C11/406

摘要： A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.