Invention Grant
- Patent Title: Process-invariant delay cell
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Application No.: US16023186Application Date: 2018-06-29
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Publication No.: US10972068B2Publication Date: 2021-04-06
- Inventor: Chao Song , Haitao Cheng , Ye Lu , Dongjiang Qiao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H03H7/30
- IPC: H03H7/30 ; H03H1/02 ; H03H3/00 ; H03H7/06 ; H01L49/02 ; H01L23/66 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
An integrated circuit (IC) device includes a first resistive strip having an input terminal and an output terminal. The IC device further includes a second resistive strip having a terminal coupled to a voltage. The second resistive strip may be coplanar with the first resistive strip. The IC device further includes a capacitor formed by the first resistive strip and the second resistive strip.
Public/Granted literature
- US20200007105A1 PROCESS-INVARIANT DELAY CELL Public/Granted day:2020-01-02
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