- 专利标题： Semiconductor memory device and operating method thereof
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申请号： US16667760申请日： 2019-10-29
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公开(公告)号： US10937513B2公开(公告)日： 2021-03-02
- 发明人: Jung Mi Ko , Kwang Ho Baek , Ji Hwan Kim , Seong Je Park , Sung Hoon Ahn , Young Don Jung
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2018-0168700 20181224
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; H01L27/11556 ; H01L27/11582 ; G11C16/10 ; G11C16/04 ; G11C11/56
摘要：
A semiconductor memory device operates by applying a program pulse to a selected word line, updating a program pulse count value, determining a current sensing mode based upon the program pulse count value, and performing a program verify operation based upon the current sensing mode. The current sensing mode is determined by determining one of an individual state current sensing operation for determining verify pass or fail for one target program state and an all-state current sensing operation for determining verify pass or fail for all target program states.
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