- 专利标题： Bit line driver device including active region
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申请号： US16379777申请日： 2019-04-09
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公开(公告)号： US10937507B2公开(公告)日： 2021-03-02
- 发明人: Liang Chen
- 申请人： Yangtze Memory Technologies Co., Ltd.
- 申请人地址： CN Wuhan
- 专利权人： Yangtze Memory Technologies Co., Ltd.
- 当前专利权人： Yangtze Memory Technologies Co., Ltd.
- 当前专利权人地址： CN Wuhan
- 代理商 Winston Hsu
- 主分类号： H01L27/11529
- IPC分类号： H01L27/11529 ; H01L27/11565 ; G11C16/24 ; G11C5/06 ; H01L27/11519 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L27/11573 ; H01L27/11582
摘要：
A bit line driver device includes a semiconductor substrate and at least one isolation structure disposed in the semiconductor substrate. Active regions are defined in the semiconductor substrate by the at least one isolation structure. Each of the active regions is elongated in a first direction, and two of the active regions are disposed adjacent to each other in a second direction. Each of the active regions includes a first portion, a second portion, and a third portion. The third portion is disposed between the first portion and the second portion in the first direction. A width of the third portion is smaller than a width of the first portion and a width of the second portion. The distance between the two adjacent active regions may be increased by the third portions accordingly.
公开/授权文献
- US20200273527A1 BIT LINE DRIVER DEVICE 公开/授权日：2020-08-27
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