- 专利标题： Semiconductor device
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申请号： US16559015申请日： 2019-09-03
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公开(公告)号： US10930773B2公开(公告)日： 2021-02-23
- 发明人: Hiroshi Kono , Teruyuki Ohashi , Masaru Furukawa
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Tokyo; JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 代理机构： White & Case LLP
- 优先权： JP2019-038034 20190301
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/08 ; H01L29/16 ; H01L29/36 ; H01L29/10 ; H01L29/423 ; H01L29/165 ; H01L29/872
摘要：
A semiconductor device according to an embodiment includes first electrode; second electrode; silicon carbide layer between the first electrode and the second electrode, the silicon carbide layer having first and second plane, the silicon carbide layer including first silicon carbide region of first-conductivity-type, second silicon carbide region and third silicon carbide region between the first silicon carbide region and the first plane, fourth silicon carbide region between the second silicon carbide region and the first plane, the fourth silicon carbide region contacting the first electrode, fifth silicon carbide region between the second silicon carbide region and the third silicon carbide region, the fifth silicon carbide region having a higher first-conductivity-type impurity concentration than the first silicon carbide region, sixth silicon carbide region between the fifth silicon carbide region and the first plane, the sixth silicon carbide region contacting the first electrode; gate electrode facing the second silicon carbide region.
公开/授权文献
- US20200279940A1 SEMICONDUCTOR DEVICE 公开/授权日：2020-09-03
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