- 专利标题： Semiconductor device
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申请号： US16598832申请日： 2019-10-10
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公开(公告)号： US10896980B2公开(公告)日： 2021-01-19
- 发明人: Yasuhiro Okamoto , Nobuo Machida , Kenichi Hisada
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2018-214459 20181115
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/417 ; H01L29/16 ; H01L29/47
摘要：
In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.
公开/授权文献
- US20200161480A1 SEMICONDUCTOR DEVICE 公开/授权日：2020-05-21
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