发明授权
- 专利标题： Devices employing thermal and mechanical enhanced layers and methods of forming same
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申请号： US16458877申请日： 2019-07-01
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公开(公告)号： US10811394B2公开(公告)日： 2020-10-20
- 发明人: Chen-Hua Yu , An-Jhih Su , Wei-Yu Chen , Ying-Ju Chen , Tsung-Shu Lin , Chin-Chuan Chang , Hsien-Wei Chen , Wei-Cheng Wu , Li-Hsien Huang , Chi-Hsi Wu , Der-Chyang Yeh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L21/56 ; H01L21/48 ; H01L21/78 ; H01L23/31 ; H01L23/498 ; H01L25/00
摘要：
A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.
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