Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16423805Application Date: 2019-05-28
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Publication No.: US10797229B2Publication Date: 2020-10-06
- Inventor: Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Tomoaki Inokuchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@26821a1a
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/16 ; H01L43/08 ; H01L27/22 ; H01L43/12

Abstract:
According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
Public/Granted literature
- US20190280189A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-09-12
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