- 专利标题： Semiconductor memory device
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申请号： US16293692申请日： 2019-03-06
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公开(公告)号： US10784280B2公开(公告)日： 2020-09-22
- 发明人: Hiroyuki Ohtori , Satoshi Seto , Takashi Fukushima
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@8ef8ae2
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/44 ; H01L27/11582 ; H01L23/522 ; H01L27/1157 ; H01L27/11565
摘要：
According to one embodiment, a semiconductor memory device includes the following structure. First conductive layers are stacked in first direction and extends in second and third directions. The first conductive layers each includes a pair of first portions, and second and third portions. The first portions extend in second direction, is provided separately from each other in third direction and includes a metal. The second portion is provided between the first portions and includes silicon. The third portion is provided on at least one side of the second portion in second direction, extends in third direction, electrically connects the first portions and includes a metal. Memory pillars extend through the second portions in first direction. Contact plugs are respectively provided on the third portion of one of the first conductive layers.
公开/授权文献
- US20200098783A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2020-03-26
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