- 专利标题： 3-dimensional flash memory with increased floating gate length
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申请号： US16441500申请日： 2019-06-14
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公开(公告)号： US10784274B1公开(公告)日： 2020-09-22
- 发明人: Rahul Agarwal , Srivardhan Gowda , Krishna Parat
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Finch & Maloney PLLC
- 主分类号： H01L27/1157
- IPC分类号： H01L27/1157 ; H01L27/11556 ; H01L27/11524 ; H01L23/532 ; H01L27/11582
摘要：
An integrated circuit memory cell includes a floating gate, a control gate, and a plurality of inter-poly dielectric (IPD) layers. The IPD layers include an IPD1 layer, an IPD2 layer, and an IPD3 layer, with the IPD2 layer interposed between the IPD1 and IPD3 layers. The IPD2 layer, which may be a nitride, does not flank the floating gate. Thus, no section of the floating gate is laterally between two sections of the IPD2 layer. Also, no section of the IPD2 layer of a first memory cell is between the floating gate of the first memory cell and a floating gate of an immediate adjacent memory cell of the same memory cell string. In some cases, an IPD4 layer is provided between the floating gate and the IPD3 layer. The IPD4 layer is relatively much thinner than layers IPD1-3 and may flank the floating gate, as may the IPD3 layer.
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