- 专利标题： Integrating silicon-BJT to a silicon-germanium-HBT manufacturing process
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申请号： US16120098申请日： 2018-08-31
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公开(公告)号： US10784257B2公开(公告)日： 2020-09-22
- 发明人: Petrus Hubertus Cornelis Magnee , Pieter Simon van Dijk , Johannes Josephus Theodorus Marinus Donkers , Dolphin Abessolo Bidzo
- 申请人： NXP B.V.
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L21/02 ; H01L21/225 ; H01L21/266 ; H01L21/306 ; H01L21/324 ; H01L21/8222 ; H01L21/8249 ; H01L27/02 ; H01L27/06 ; H01L29/04 ; H01L29/165 ; H01L29/66 ; H01L29/732 ; H01L29/737
摘要：
This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.
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