Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A memory array may be operated in a half density mode, in which a subset of the memory cells is designated as reference memory cells. Each reference memory cell may be paired to an active memory cell and may act as a reference signal when sensing the active memory cell. Each pair of active and reference memory cells may be connected to a single access line. Sense components (e.g., sense amplifiers) associated with reference memory cells may be deactivated in half density mode. The entire memory array may be operated in half density mode, or a portion of the array may operate in half density mode and the remainder of the array may operate in full density mode.