Invention Grant
- Patent Title: Three-dimensional semiconductor devices
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Application No.: US16739417Application Date: 2020-01-10
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Publication No.: US10748929B2Publication Date: 2020-08-18
- Inventor: Changhyun Lee , Chanjin Park , Byoungkeun Son , Sung-Il Chang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32e83693
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11551 ; H01L27/11556 ; H01L27/11578 ; H01L29/06 ; H01L29/792
Abstract:
A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.
Public/Granted literature
- US20200152659A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES Public/Granted day:2020-05-14
Information query
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