Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16195683Application Date: 2018-11-19
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Publication No.: US10686054B2Publication Date: 2020-06-16
- Inventor: Jheng-Sheng You , Hsin-Chih Lin , Kun-Ming Huang , Lieh-Chuan Chen , Po-Tao Chu , Shen-Ping Wang , Chien-Li Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/45 ; H01L29/778 ; H01L29/417 ; H01L29/10 ; H01L29/40
Abstract:
A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.
Public/Granted literature
- US20190109210A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-11
Information query
IPC分类:
