- 专利标题： Methods of forming recesses in substrates by etching dummy Fins
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申请号： US16045298申请日： 2018-07-25
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公开(公告)号： US10679950B2公开(公告)日： 2020-06-09
- 发明人: Wan-Chun Kuan , Chih-Teng Liao , Yi-Wei Chiu , Tzu-Chan Weng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/84 ; H01L21/306 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L23/00 ; H01L29/08 ; H01L29/10 ; H01L29/161 ; H01L29/24
摘要：
An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.
公开/授权文献
- US20180358306A1 Dummy Fin Etch to Form Recesses in Substrate 公开/授权日：2018-12-13
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