Invention Grant
- Patent Title: Semiconductor method for forming semiconductor structure having bump on tilting upper corner surface
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Application No.: US16183701Application Date: 2018-11-07
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Publication No.: US10607858B2Publication Date: 2020-03-31
- Inventor: Po-Chun Lin , Chin-Lung Chu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/482 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L21/48
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.
Public/Granted literature
- US20190074197A1 SEMICONDUCTOR METHOD FOR FORMING SEMICONDUCTOR STRUCTURE HAVING BUMP ON TILTING UPPER CORNER SURFACE Public/Granted day:2019-03-07
Information query
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