发明授权
- 专利标题： Memory device
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申请号： US16094265申请日： 2015-03-18
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公开(公告)号： US10586919B2公开(公告)日： 2020-03-10
- 发明人: Jea Gun Park , Du Yeong Lee , Seung Eun Lee , Min Su Jeon , Jong Ung Baek , Tae Hun Shim
- 申请人： Industry-University Cooperation Foundation Hanyang University
- 申请人地址： KR Seoul
- 专利权人： Industry-University Cooperation Foundation Hanyang University
- 当前专利权人： Industry-University Cooperation Foundation Hanyang University
- 当前专利权人地址： KR Seoul
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2014-0046563 20140418; KR10-2014-0102139 20140808
- 国际申请： PCT/KR2015/002606 WO 20150318
- 国际公布： WO2015/160092 WO 20151022
- 主分类号： H01L43/10
- IPC分类号： H01L43/10 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/12
摘要：
A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. The lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.
公开/授权文献
- US20190229259A1 MEMORY DEVICE 公开/授权日：2019-07-25
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