- 专利标题： Semiconductor device comprising PN junction diode and Schottky barrier diode
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申请号： US16054246申请日： 2018-08-03
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公开(公告)号： US10559552B2公开(公告)日： 2020-02-11
- 发明人: Keiji Okumura
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 优先权： JP2010-121375 20100527
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L25/07 ; H02M7/00 ; H01L23/00 ; H01L29/24 ; H01L23/31 ; H01L29/16 ; H01L29/78 ; H01L29/861 ; H01L29/872
摘要：
A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
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