Invention Grant
- Patent Title: Method for measuring semiconductor device
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Application No.: US15855520Application Date: 2017-12-27
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Publication No.: US10551326B2Publication Date: 2020-02-04
- Inventor: Hyo Hyeong Kang , Kang Woong Ko , Sung Yoon Ryu , Gil Woo Song , Jae Hyung Ahn , Chul Hyung Yoo , Kyoung Hwan Lee , Sung Ho Jang , Yong Ju Jeon , Hyoung Jo Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0180918 20161228
- Main IPC: G01N21/95
- IPC: G01N21/95 ; H01L21/66 ; G06K9/03 ; G06K9/62 ; G01N21/88 ; H01L21/67

Abstract:
A method for measuring a semiconductor device is provided. A method for measuring a semiconductor device includes defining an interest area and an acceptable area in a chip area on a wafer; performing a first measurement of the chip area with a spectral imaging device to acquire spectrum data of the chip area; assuming the distribution of the spectrum data of a first pixel in the acceptable area is a normal distribution; calculating a distance from a central point on the normal distribution to second pixels in the interest area; selecting a position of a second pixel having a distance from the central point on the normal distribution greater than a predetermined range, among the second pixels, as a candidate position; and performing a second measurement of the candidate position.
Public/Granted literature
- US20180202942A1 METHOD FOR MEASURING SEMICONDUCTOR DEVICE Public/Granted day:2018-07-19
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