A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.