- 专利标题： Semiconductor device and method of forming the same
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申请号： US15954305申请日： 2018-04-16
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公开(公告)号： US10535686B2公开(公告)日： 2020-01-14
- 发明人: Victor Chiang Liang , Fu-Huan Tsai , Fang-Ting Kuo , Meng-Chang Ho , Yu-Lin Wei , Chi-Feng Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L27/146 ; H01L29/66 ; H01L27/07 ; H01L29/93
摘要：
A semiconductor device includes a substrate, wherein the substrate includes a channel region. The semiconductor device further includes an isolation feature in the substrate. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate. The second portion partially covers the channel region. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure partially covers the second portion of the isolation feature.
公开/授权文献
- US20180233522A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 公开/授权日：2018-08-16
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