- 专利标题： P-type strained channel in a fin field effect transistor (FinFET) device
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申请号： US15922681申请日： 2018-03-15
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公开(公告)号： US10510889B2公开(公告)日： 2019-12-17
- 发明人: Shahaji B. More , Huai-Tei Yang , Shih-Chieh Chang , Shu Kuan , Cheng-Han Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L21/8234
摘要：
In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.
公开/授权文献
- US20190165175A1 P-Type Strained Channel 公开/授权日：2019-05-30
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