- 专利标题: State dependent sense circuits and pre-charge operations for storage devices
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申请号: US15723422申请日: 2017-10-03
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公开(公告)号: US10510383B2公开(公告)日: 2019-12-17
- 发明人: Tai-Yuan Tseng , Anirudh Amarnath
- 申请人: SanDisk Technologies LLC
- 申请人地址: US TX Plano
- 专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人: SANDISK TECHNOLOGIES LLC
- 当前专利权人地址: US TX Plano
- 代理机构: Foley & Lardner LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/12 ; G11C16/24 ; G11C29/12 ; G11C16/34 ; G11C16/26 ; G11C11/56 ; G11C16/08 ; G11C16/04
摘要:
A circuit includes selected sense circuits configured to be connected to selected bit lines and unselected sense circuits configured to be connected to unselected bit lines during a sense operation. The selected and unselected sense circuits are configured to perform a state-dependent pre-charge operation during the sense operation. In particular, the selected sense circuits may enable respective pre-charge circuit paths that supply a pre-charge supply voltage to respective sense nodes in the selected sense circuits. Additionally, the unselected sense circuits may disable respective pre-charge circuit paths to prevent the supply of the pre-charge supply voltage to respective sense nodes in the unselected sense circuits. A sense circuit controller may control latches to control the enabling and disabling of the pre-charge circuit paths.
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