- 专利标题: Memory module and memory system including the same
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申请号: US15831024申请日: 2017-12-04
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公开(公告)号: US10509594B2公开(公告)日: 2019-12-17
- 发明人: Kwan-Dong Kim
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2017-0062760 20170522
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G06F3/06 ; G06F11/10 ; G11C5/04 ; G11C7/10 ; G11C7/22 ; G11C29/52 ; G11C29/04
摘要:
A memory module includes memory devices; data buffers suitable for receiving write data transferred from a memory controller and transmitting read data to the memory controller; a buffer control signal generation circuit suitable for generating buffer control signals for controlling the data buffers, by using a command transferred from the memory controller; a command delay circuit suitable for generating an effective command by delaying the command by a delay amount of the buffer control signal generation circuit in a read operation and a write operation; a data processing circuit suitable for processing write data transferred from the data buffers and transferring processed write data to the memory devices, and processing read data transferred from the memory devices and transferring processed read data to the data buffers, in response to the effective command; and a command buffer circuit suitable for transferring the effective command to the memory devices.
公开/授权文献
- US20180335979A1 MEMORY MODULE AND MEMORY SYSTEM INCLUDING THE SAME 公开/授权日:2018-11-22
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