- 专利标题: Memory device including multiple select lines and control lines having different vertical spacing
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申请号: US16031831申请日: 2018-07-10
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公开(公告)号: US10468423B2公开(公告)日: 2019-11-05
- 发明人: Koji Sakui
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; G06F12/02 ; G11C16/08 ; H01L27/11582 ; G11C16/04 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L27/105
摘要:
Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a pillar including a length, a memory cell string and control lines located along a first segment of the pillar, and select lines located along a second segment of the pillar. The control lines include at least a first control line and a second control line. The first control line is adjacent the second control line. The first control line is separated from the second control line by a first distance in a direction of the length of the pillar. The select lines include at least a first select line and a second select line. The first select line is separated from the second select line by a second distance in the direction of the length of the pillar. The second distance is less than the first distance.
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