发明授权
- 专利标题： Ultra high voltage semiconductor device with electrostatic discharge capabilities
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申请号： US15882193申请日： 2018-01-29
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公开(公告)号： US10461183B2公开(公告)日： 2019-10-29
- 发明人: Tsai-Feng Yang , Chih-Heng Shen , Chun-Yi Yang , Kun-Ming Huang , Po-Tao Chu , Shen-Ping Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L27/02 ; H01L29/423
摘要：
A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.
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