Invention Grant
- Patent Title: Mask blank and phase shift mask using same
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Application No.: US15641454Application Date: 2017-07-05
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Publication No.: US10444619B2Publication Date: 2019-10-15
- Inventor: Hye Kyoung Lee , Il Yong Jang , Hwan Seok Seo , Byung Gook Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0094809 20160726
- Main IPC: G03F1/32
- IPC: G03F1/32 ; G03F1/00 ; G03F1/58 ; G03F7/00 ; H01L21/027 ; H01L21/033

Abstract:
A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.
Public/Granted literature
- US20180033612A1 MASK BLANK AND PHASE SHIFT MASK USING SAME Public/Granted day:2018-02-01
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