发明授权
- 专利标题： Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity
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申请号： US15802040申请日： 2017-11-02
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公开(公告)号： US10418246B2公开(公告)日： 2019-09-17
- 发明人: Takashi Kuratomi , Avgerinos V. Gelatos , I-Cheng Chen , Faruk Gungor
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; C23C16/06 ; C23C16/455 ; C23C16/50 ; C23C16/04 ; C23C16/14 ; C23C16/452 ; H01J37/00 ; H01L21/3205 ; H01L21/67
摘要：
Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.
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