- 专利标题： Magnetic memory device
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申请号： US15918344申请日： 2018-03-12
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公开(公告)号： US10403381B2公开(公告)日： 2019-09-03
- 发明人: Michael Arnaud Quinsat , Takuya Shimada , Susumu Hashimoto , Nobuyuki Umetsu , Yasuaki Ootera , Masaki Kado , Tsuyoshi Kondo , Shiho Nakamura , Tomoya Sanuki , Yoshihiro Ueda , Yuichi Ito , Shinji Miyano , Hideaki Aochi , Yasuhito Yoshimizu
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2017-179563 20170919
- 主分类号： G11C19/08
- IPC分类号： G11C19/08 ; H01L43/08 ; H01L43/10
摘要：
According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
公开/授权文献
- US20190088345A1 MAGNETIC MEMORY DEVICE 公开/授权日：2019-03-21
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