- 专利标题： Highly sensitive pressure sensor and input device using the same
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申请号： US15266175申请日： 2016-09-15
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公开(公告)号： US10401974B2公开(公告)日： 2019-09-03
- 发明人: Woo Young Shim , Tae Yoon Lee , Kil Soo Lee , Jae Hong Lee , Dae Eun Kim
- 申请人： Industry-Academic Cooperation Foundation, Yonsei University
- 申请人地址： KR Seoul
- 专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人地址： KR Seoul
- 代理机构： Norton Rose Fulbright US LLP
- 优先权： KR10-2015-0132469 20150918; KR10-2015-0179011 20151215; KR10-2016-0106845 20160823
- 主分类号： G06F3/02
- IPC分类号： G06F3/02 ; G09G5/00 ; G06F3/023 ; G06F3/041 ; G06F3/044 ; G01L1/14 ; G06F3/047 ; H03K17/96 ; G06F3/0488 ; G06F3/0354
摘要：
Provided is a highly sensitive pressure sensor that includes a lower substrate on which a first electrode having surface roughness is formed; an upper substrate on which a second electrode having surface roughness is formed; and a dielectric material stacked between the lower substrate and the upper substrate to be disposed between the first electrode and the second electrode.
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