- 专利标题: Semiconductor device
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申请号: US15722016申请日: 2017-10-02
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公开(公告)号: US10319723B2公开(公告)日: 2019-06-11
- 发明人: Kiyoshi Kato
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2010-152021 20100702
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C16/26 ; H01L27/06 ; H01L27/12 ; H01L27/105 ; H01L27/108 ; H01L27/1156 ; H01L27/11521 ; H01L27/11551
摘要:
An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.
公开/授权文献
- US20180090499A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-03-29
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