- 专利标题： FinFETs having dielectric punch-through stoppers
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申请号： US15665184申请日： 2017-07-31
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公开(公告)号： US10312327B2公开(公告)日： 2019-06-04
- 发明人: Cheng-Hung Chang , Chen-Hua Yu , Chen-Nan Yeh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/10 ; H01L21/8234 ; H01L27/088 ; H01L27/12 ; H01L29/78 ; H01L29/06
摘要：
A semiconductor structure includes a semiconductor substrate; a planar transistor on a first portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate has a first top surface; and a multiple-gate transistor on a second portion of the semiconductor substrate. The second portion of the semiconductor substrate is recessed from the first top surface to form a fin of the multiple-gate transistor. The fin is electrically isolated from the semiconductor substrate by an insulator.
公开/授权文献
- US20170330939A1 FinFETs Having Dielectric Punch-Through Stoppers 公开/授权日：2017-11-16
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